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BUZ103SL PDF预览

BUZ103SL

更新时间: 2024-09-24 22:27:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 121K
描述
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

BUZ103SL 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.23Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED雪崩能效等级(Eas):140 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):28 A最大漏极电流 (ID):28 A
最大漏源导通电阻:0.044 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):112 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUZ103SL 数据手册

 浏览型号BUZ103SL的Datasheet PDF文件第2页浏览型号BUZ103SL的Datasheet PDF文件第3页浏览型号BUZ103SL的Datasheet PDF文件第4页浏览型号BUZ103SL的Datasheet PDF文件第5页浏览型号BUZ103SL的Datasheet PDF文件第6页浏览型号BUZ103SL的Datasheet PDF文件第7页 
BUZ 103 SL  
SPP28N05L  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Logic Level  
• Avalanche-rated  
• dv/dt rated  
• 175°C operating temperature  
• also in SMD available  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
Package  
Ordering Code  
VDS  
ID  
RDS(on  
)
W
BUZ 103 SL  
55 V  
28 A  
0.05  
TO-220 AB  
Q67040-S4008-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
28  
20  
C
T = 100 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
112  
C
Avalanche energy, single pulse  
E
mJ  
AS  
W
I = 28 A, V = 25 V, R = 25  
D
DD  
GS  
L = 357 µH, T = 25 °C  
140  
28  
j
Avalanche current,limited by T  
I
A
jmax  
AR  
Avalanche energy,periodic limited by T  
E
7.5  
mJ  
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 28 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
Gate source voltage  
Power dissipation  
V
±
14  
V
GS  
P
W
tot  
T = 25 °C  
75  
C
Semiconductor Group  
1
30/Jan/1998  

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