Datasheet > BUZ11

BUZ11

更新时间： 2024-11-26 23:14:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
6页	49K
描述
30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

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替代型号

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BUZ11 数据手册

BUZ11

Data Sheet

June 1999

File Number 2253.2

30A, 50V, 0.040 Ohm, N-Channel Power

MOSFET

Features

• 30A, 50V

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

• r

= 0.040Ω

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA9771.

• Majority Carrier Device

Ordering Information

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

BRAND

BUZ11

TO-220AB

NOTE: When ordering, use the entire part number.

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-5

12 3 4 5 6

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BUZ11 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFZ34N	INFINEON	功能相似	汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO
IRFZ34NPBF	INFINEON	功能相似	HEXFET Power MOSFET
IRFZ34N	INFINEON	功能相似	Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

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BUZ110SLE3045	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 80A I(D) \| TO-263AB
BUZ111	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
BUZ1116	MOTOROLA	获取价格	30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
BUZ111S	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
BUZ111SE3045	INFINEON	获取价格	SIPMOS Power Transistor