Datasheet > BUZ111SQ67040S4003A2

BUZ111SQ67040S4003A2

更新时间： 2024-11-28 23:38:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	106K
描述
TRANSISTOR LEISTUNGS MOSFET

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中文翻译

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BUZ 111S

SIPMOS Power Transistor

Product Summary

Features

Drain source voltage

0.008

• N channel

Drain-Source on-state resistance

Continuous drain current

Ω

• Enhancement mode

DS(on)

• Avalanche rated

• dv/dt rated

• 175˚C operating temperature

Pin 1 Pin 2 Pin 3

Type

Package

Ordering Code

Packaging

BUZ111S

P-TO220-3-1 Q67040-S4003-A2 Tube

P-TO263-3-2 Q67040-S4003-A6 Tape and Reel

P-TO263-3-2 Q67040-S4003-A5 Tube

BUZ111S E3045A

BUZ111S E3045

Maximum Ratings, at T = 25 ˚C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 ˚C,

T = 100 ˚C

Pulsed drain current

320

IDpulse

T = 25 ˚C

Avalanche energy, single pulse

700

I = 80 A, V = 25 V, R = 25 Ω

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I = 80 A, V = 40 V, di/dt = 200 A/µs,

= 175 ˚C

jmax

Gate source voltage

Power dissipation

±20

tot

300

T = 25 ˚C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55... +175

55/175/56

˚C

T , T

stg

Data Sheet

05.99

12 3 4 5 6 7 8

中文翻译

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