BUZ111

更新时间： 2024-11-26 23:14:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	123K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

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中文翻译

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数据手册

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BUZ111 数据手册

BUZ111S

SPP80N05

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• dv/dt rated

• 175°C operating temperature

• also in SMD available

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

V_DS

I_D

R_DS(on

)

BUZ111S

55 V

80 A

0.008

TO-220 AB

Q67040-S4003-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 100 °C

Pulsed drain current

Dpuls

T = 25 °C

320

Avalanche energy, single pulse

I = 80 A, V = 25 V, R = 25

L = 220 µH, T = 25 °C

700

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Reverse diode dv/dt

jmax

dv/dt

kV/µs

I = 80 A, V = 40 V, di /dt = 200 A/µs

= 175 °C

jmax

Gate source voltage

Power dissipation

tot

T = 25 °C

250

Semiconductor Group

28/Jan/1998

12 3 4 5 6 7 8

中文翻译

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