是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | D2PAK |
包装说明: | PLASTIC, TO-263, 3 PIN | 针数: | 4 |
Reach Compliance Code: | unknown | 风险等级: | 5.44 |
其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 雪崩能效等级(Eas): | 245 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 47 A | 最大漏源导通电阻: | 0.024 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 188 A |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ102SLE3045A | INFINEON |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met |
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BUZ103 | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-r |
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BUZ103AL | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t ra |
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BUZ103S | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancemen |
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BUZ103S4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 5.3A I(D) | SO |
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BUZ103S-4 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 55V, 0.045ohm, 4-Element, N-Channel, Silicon, Me |
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BUZ103SE3045 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 31A I(D) | TO-263AB |
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BUZ103SE3045A | ETC |
获取价格 |
N-Channel Enhancement MOSFET |
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BUZ103SL | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rate |
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BUZ103SL | ROCHESTER |
获取价格 |
28A, 55V, 0.044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN |
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