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BUZ100SLE3045A PDF预览

BUZ100SLE3045A

更新时间: 2024-01-07 17:00:34
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 103K
描述
Power Field-Effect Transistor, 70A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

BUZ100SLE3045A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:PLASTIC, TO-263, 3 PIN
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED雪崩能效等级(Eas):380 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):70 A最大漏极电流 (ID):70 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):170 W最大脉冲漏极电流 (IDM):280 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUZ100SLE3045A 数据手册

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BUZ 100SL  
SIPMOS Power Transistor  
Product Summary  
Features  
Drain source voltage  
55  
0.012  
70  
V
V
DS  
N channel  
Drain-Source on-state resistance  
Continuous drain current  
R
Enhancement mode  
DS(on)  
A
I
D
Avalanche rated  
Logic Level  
dv/dt rated  
175˚C operating temperature  
Pin 1 Pin 2 Pin 3  
Type  
Package  
Ordering Code  
Packaging  
G
D
S
BUZ100SL  
P-TO220-3-1 Q67040-S4000-A2 Tube  
P-TO263-3-2 Q67040-S4000-A6 Tape and Reel  
P-TO263-3-2 Q67040-S4000-A5 Tube  
BUZ100SL E3045A  
BUZ100SL E3045  
Maximum Ratings, at T = 25 ˚C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
A
I
D
T = 25 ˚C  
70  
50  
C
T = 100 ˚C  
C
Pulsed drain current  
280  
IDpulse  
T = 25 ˚C  
C
Avalanche energy, single pulse  
380  
mJ  
E
E
AS  
AR  
I = 70 A, V = 25 V, R = 25 Ω  
D
DD  
GS  
17  
6
Avalanche energy, periodic limited by T  
Reverse diode dv/dt  
jmax  
kV/µs  
dv/dt  
I = 70 A, V = 40 V, di/dt = 200 A/µs,  
S
DS  
T
= 175 ˚C  
jmax  
Gate source voltage  
Power dissipation  
±20  
170  
V
V
P
GS  
tot  
W
T = 25 ˚C  
C
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55... +175  
55/175/56  
˚C  
T , T  
j
stg  
Data Sheet  
1
05.99  

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