Datasheet > BUZ100SQ67040W4001A2

BUZ100SQ67040W4001A2

更新时间： 2024-02-17 05:59:40

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	110K
描述
TRANSISTOR LEISTUNGS MOSFET

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BUZ100SQ67040W4001A2 数据手册

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BUZ 100S

SIPMOS Power Transistor

Product Summary

Features

Drain source voltage

0.015

• N channel

Drain-Source on-state resistance

Continuous drain current

Ω

• Enhancement mode

DS(on)

• Avalanche rated

• dv/dt rated

• 175˚C operating temperature

Pin 1 Pin 2 Pin 3

Type

Package

Ordering Code

Packaging

BUZ100S

P-TO220-3-1 Q67040-S4001-A2 Tube

P-TO263-3-2 Q67040-S4001-A6 Tape and Reel

P-TO263-3-2 Q67040-S4001-A5 Tube

BUZ100S E3045A

BUZ100S E3045

Maximum Ratings, at T = 25 ˚C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 ˚C

T = 100 ˚C

Pulsed drain current

308

IDpulse

T = 25 ˚C

Avalanche energy, single pulse

380

I = 77 A, V = 25 V, R = 25 Ω

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I = 77 A, V = 40 V, di/dt = 200 A/µs,

= 175 ˚C

jmax

Gate source voltage

Power dissipation

±20

tot

170

T = 25 ˚C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55... +175

55/175/56

˚C

T , T

stg

Data Sheet

05.99

12 3 4 5 6 7 8

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