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BUZ101 PDF预览

BUZ101

更新时间: 2024-09-23 22:27:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 189K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

BUZ101 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29其他特性:AVALANCHE RATED
雪崩能效等级(Eas):70 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):29 A
最大漏极电流 (ID):29 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):116 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BUZ101 数据手册

 浏览型号BUZ101的Datasheet PDF文件第2页浏览型号BUZ101的Datasheet PDF文件第3页浏览型号BUZ101的Datasheet PDF文件第4页浏览型号BUZ101的Datasheet PDF文件第5页浏览型号BUZ101的Datasheet PDF文件第6页浏览型号BUZ101的Datasheet PDF文件第7页 
BUZ 101  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
• dv/dt rated  
• Low on-resistance  
• 175°C operating temperature  
• also in TO-220 SMD available  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
DS(on)  
Package  
Ordering Code  
D
BUZ 101  
50 V  
29 A  
0.06  
TO-220 AB  
C67078-S1350-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
29  
Unit  
Continuous drain current  
I
A
D
T = 31 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
C
116  
Avalanche energy, single pulse  
E
AS  
mJ  
I = 29 A, V = 25 V, R = 25  
D
DD  
GS  
L = 83 µH, T = 25 °C  
70  
j
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 29 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
C
100  
Operating temperature  
Storage temperature  
T
T
-55 ... + 175 °C  
-55 ... + 175  
j
stg  
Thermal resistance, chip case  
R
R
1.5  
K/W  
thJC  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
75  
thJA  
E
55 / 175 / 56  
Semiconductor Group  
1
07/96  

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