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BUL1102E PDF预览

BUL1102E

更新时间: 2024-09-13 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 212K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL1102E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.7外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):35
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUL1102E 数据手册

 浏览型号BUL1102E的Datasheet PDF文件第2页浏览型号BUL1102E的Datasheet PDF文件第3页浏览型号BUL1102E的Datasheet PDF文件第4页浏览型号BUL1102E的Datasheet PDF文件第5页浏览型号BUL1102E的Datasheet PDF文件第6页 
BUL1102E  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS  
FOUR LAMP ELECTRONIC BALLAST FOR:  
120 V MAINS IN PUSH-PULL  
3
CONFIGURATION;  
277 V MAINS IN HALF BRIDGE CURRENT  
FEED CONFIGURATION.  
2
1
TO-220  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability. It  
uses a Cellular Emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining a wide RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
Thanks to an increased intermediate layer, it has  
an intrinsic ruggedness which enables the  
transistor to withstand a high collector current  
level during Breakdown condition, without using  
the transil protection usually necessary in typical  
converters for lamp ballast.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1100  
V
V
450  
12  
V
4
A
ICM  
Collector Peak Current (tp <5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp <5 ms)  
4
70  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
March 2003  

BUL1102E 替代型号

型号 品牌 替代类型 描述 数据表
BUL1102EFP STMICROELECTRONICS

类似代替

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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