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BUL1203E PDF预览

BUL1203E

更新时间: 2024-09-13 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 212K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL1203E 数据手册

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BUL1203E  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING (277 V HALF  
BRIDGE AND 120 V PUSH-PULL  
TOPOLOGIES)  
3
2
1
TO-220  
DESCRIPTION  
The BUL1203E is a new device manufactured  
using Diffused Collector technology to enhance  
switching speeds and tight hFE range while  
maintaining a wide RBSOA.  
Thanks to his structure it has an intrinsic  
ruggedness which enables the transistor to  
withstand a high collector current level during  
Breakdown condition, without using the transil  
protection usually necessary in typical converters  
for lamp ballast.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-BaseVoltage (IE = 0)  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1200  
V
V
1200  
550  
V
9
V
5
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
8
A
IB  
2
4
A
IBM  
Base Peak Current (tp < 5 ms)  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
100  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
December 2003  

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4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN