Datasheet > BUL1203E

BUL1203E

更新时间： 2024-11-25 22:27:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
7页	212K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BUL1203E 数据手册

BUL1203E

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

APPLICATIONS

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING (277 V HALF

BRIDGE AND 120 V PUSH-PULL

TOPOLOGIES)

TO-220

DESCRIPTION

The BUL1203E is a new device manufactured

using Diffused Collector technology to enhance

switching speeds and tight h_FErange while

maintaining a wide RBSOA.

Thanks to his structure it has an intrinsic

ruggedness which enables the transistor to

withstand a high collector current level during

Breakdown condition, without using the transil

protection usually necessary in typical converters

for lamp ballast.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-BaseVoltage (I_E= 0)

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

1200

550

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

Total Dissipation at T_c= 25 C

100

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

December 2003

12 3 4 5 6 7

中文翻译

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