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BUL128D PDF预览

BUL128D

更新时间: 2024-11-26 09:02:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 62K
描述
Silicon NPN Power Transistors

BUL128D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

BUL128D 数据手册

 浏览型号BUL128D的Datasheet PDF文件第2页浏览型号BUL128D的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUL128D  
DESCRIPTION  
·
·With TO-220C package  
·High voltage ,high speed  
·Integrated antiparallel  
collector-emitter diode  
APPLICATIONS  
·Designed for use in lighting  
applications and low cost  
switch-mode power supplies.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
UNIT  
V
Open emitter  
Open base  
700  
400  
V
Open collector  
9
V
4
A
ICM  
Collector current-Peak (tp<5 ms)  
Base current  
8
A
IB  
2
4
A
IBM  
Base current-Peak (tp<5 ms)  
Total power dissipation  
Junction temperature  
Storage temperature  
A
PT  
TC=25  
70  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-C  
Thermal resistance from junction to case  
1.78  
/W  

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