Datasheet > BUL128D

BUL128D

更新时间： 2024-09-14 09:02:27

品牌	Logo	应用领域
TGS		晶体晶体管开关高压
页数	文件大小	规格书
1页	65K
描述
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

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中文翻译

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BUL128D 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

BUL128D

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

■

DESCRIPTION

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

■

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage

capability. It uses a Cellular Emitter structure

with planar

■

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

VERY HIGH SWITCHING SPEED

■

APPLICATIONS

■

ELECTRONIC BALLASTS FOR FLUORESCENT

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

LIGHTING

■

FLYBACK AND FORWARD SINGLE

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value

Unit

V_CBO

700

V_CEO

V_EBO

I_C

400

9.0

4.0

Base Current

I_B

2.0

Total Dissipation at

P_tot

T_j

^oC

Max. Operating Junction Temperature

150

TO-220AB

Storage Temperature

T_stg

-65~150

℃

(Tcase = 25

unless otherwise specified)

Parameter

Symbol

Test Conditions

V_CE=700V, I_E=0

Min.

—

Typ.

—

Max. Unit

Collector Cut-off Current

I_CES

I_EBO

0.25

Emitter Cut-off Current

V_EB=9V, I_C=0

0.1

—

V_CEO

Collector-Emitter Sustaining Voltage

I_C=100mA, I_B=0

400

—

Emitter-Base BreakdownVoltage

(I_C=0)

I_E=10mA

BV_EBO

—

h_FE(1)

h_FE(2)

V_CE=5V, I_C=2.0A

V_CE=5V, I_C=10mA

—

DC Current Gain

—

I_C=1.0A,I_B=0.2A

I_C=4.0A, I_B=1.0A

1.0

—

Collector-Emitter Saturation Voltage

V_CE(sat)

0.5

—

I_C=1.0A,I_B=0.2A

I_C=2.5A,I_B=0.5A

1.2

1.3

—

Base-Emitter Saturation Voltage

Storage Time

V_BE(sat)

T_S

I_C=2.0A I_B1=-I_B2=0.4A

2.0

2.9

—

中文翻译

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