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BUL128D-B PDF预览

BUL128D-B

更新时间: 2024-11-27 22:11:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压PC局域网
页数 文件大小 规格书
7页 75K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL128D-B 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:2.27Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:179238
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220
Samacsys Released Date:2015-07-22 14:46:59Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:70 W
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:1.5 VBase Number Matches:1

BUL128D-B 数据手册

 浏览型号BUL128D-B的Datasheet PDF文件第2页浏览型号BUL128D-B的Datasheet PDF文件第3页浏览型号BUL128D-B的Datasheet PDF文件第4页浏览型号BUL128D-B的Datasheet PDF文件第5页浏览型号BUL128D-B的Datasheet PDF文件第6页浏览型号BUL128D-B的Datasheet PDF文件第7页 
BUL128D-B  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
3
2
1
APPLICATIONS:  
TO-220  
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
FLYBACKAND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
4
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
4
70  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
November 1998  

BUL128D-B 替代型号

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