Datasheet > BUL128D-B_05

BUL128D-B_05

更新时间： 2024-09-14 03:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
8页	230K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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BUL128D-B_05 数据手册

BUL128D-B

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

STMicroelectronics PREFERRED SALES

TYPE

Figure 1: Package

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

VERY HIGH SWITCHING SPEED

INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

TO-220

APPLICATIONS

ELECTRONIC BALLAST FOR

FLUORESCENT LIGHTING

Figure 2: Internal Schematic Diagram

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

Table 1: Order Codes

Part Number

Marking

Package

Packaging

BUL128D-B

TO-220

Tube

Table 2: Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage (V = 0)

700

400

(BR)EBO

CES

Collector-Emitter Voltage (I = 0)

CEO

Emitter-Base Voltage

EBO

(I = 0, I = 2 A, t < 10 µs, T = 150 C)

Collector Current

Collector Peak Current (t < 5ms)

Base Current

Base Peak Current (t < 5ms)

Rev. 2

February 2005

1/8

12 3 4 5 6 7 8

中文翻译

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