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BUL128 PDF预览

BUL128

更新时间: 2024-09-14 06:44:39
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SUNTAC 晶体开关晶体管高压
页数 文件大小 规格书
5页 156K
描述
High Voltage Fast-Switching NPN Power Transistor

BUL128 数据手册

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High Voltage Fast-Switching  
NPN Power Transistor  
BUL128  
NPN TRANSISTOR  
INTERNAL SCHEMATIC DIAGR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
VERY HIGH SWITCHING SPEED  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
4
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
1
4. COLLECTOR  
2
3
TO-220  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
700  
400  
V
9
V
4
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
4
70  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/5  

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