5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> BUL146F
BUL146F PDF预览

BUL146F

更新时间： 2024-11-27 23:37:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
10页 391K
描述
POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS

阅读下载

中文翻译

获取价格

BUL146F 技术参数

生命周期：Transferred零件包装代码：SFM
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.2
Is Samacsys：N外壳连接：ISOLATED
最大集电极电流 (IC)：6 A基于收集器的最大容量：150 pF
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：8JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：40 W
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：14 MHz
最大关闭时间（toff）：2500 ns最大开启时间（吨）：150 ns
VCEsat-Max：0.7 VBase Number Matches：1

BUL146F 数据手册

 浏览型号BUL146F的Datasheet PDF文件第2页浏览型号BUL146F的Datasheet PDF文件第3页浏览型号BUL146F的Datasheet PDF文件第4页浏览型号BUL146F的Datasheet PDF文件第5页浏览型号BUL146F的Datasheet PDF文件第6页浏览型号BUL146F的Datasheet PDF文件第7页 
Order this document  
by BUL146/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
The BUL146/BUL146F have an applications specific state–of–the–art die designed  
for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power  
supplies for all types of electronic equipment. These high voltage/high speed  
transistors offer the following:  
POWER TRANSISTOR  
6.0 AMPERES  
700 VOLTS  
40 and 100 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain  
— Fast Switching  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Full Characterization at 125°C  
Parametric Distributions are Tight and Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
•
BUL146F, Isolated Case 221D, is UL Recognized to 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL146  
BUL146F  
400  
Unit  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
V
700  
9.0  
CES  
EBO  
BUL146  
CASE 221A–06  
TO–220AB  
V
Collector Current — Continuous  
— Peak(1)  
I
C
6.0  
15  
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
V
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
—
—
—
4500  
3500  
1500  
ISOL  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
100  
0.8  
40  
0.32  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
BUL146F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Thermal Resistance — Junction to Case  
R
R
1.25  
62.5  
3.125  
62.5  
°C/W  
θJC  
θJA  
— Junction to Ambient  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CEO  
B
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CE  
CES EB  
CES  
(T = 125°C)  
C
Collector Cutoff Current (V  
CE  
= 500 V, V  
EB  
= 0)  
(T = 125°C)  
C
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
1234567...10

中文翻译

下载PDF

与BUL146F相关器件

型号 品牌 获取价格 描述 数据表
BUL146FG ONSEMI

获取价格

 		SWITCHMODE NPN Bipolar Power Transistor
BUL146G ONSEMI

获取价格

 		SWITCHMODE NPN Bipolar Power Transistor
BUL146L MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146N MOTOROLA

获取价格

 		8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146S MOTOROLA

获取价格

 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146T MOTOROLA

获取价格

 		8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146U MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146U2 MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146UA MOTOROLA

获取价格

 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146W MOTOROLA

获取价格

 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与BUL146F相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证