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BUL146F

更新时间： 2024-11-29 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管功率双极晶体管
页数 文件大小 规格书
11页 229K
描述
功率 8A 400V NPN

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中文翻译

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BUL146F 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.17
Is Samacsys：N其他特性：UL RECOGNIZED
外壳连接：ISOLATED最大集电极电流 (IC)：6 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：8JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：240极性/信道类型：NPN
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：14 MHzBase Number Matches：1

BUL146F 数据手册

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BUL146G, BUL146FG  
SWITCHMODEt NPN  
Bipolar Power Transistor  
For Switching Power Supply Applications  
The BUL146G / BUL146FG have an applications specific  
state−of−the−art die designed for use in fluorescent electric lamp  
ballasts to 130 W and in Switchmode Power supplies for all types of  
electronic equipment.  
http://onsemi.com  
POWER TRANSISTOR  
8.0 AMPERES  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain  
♦ Fast Switching  
1000 VOLTS  
45 and 125 WATTS  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
MARKING  
DIAGRAMS  
• Full Characterization at 125°C  
• Two Packages Choices: Standard TO−220 or Isolated TO−220  
• Parametric Distributions are Tight and Consistent Lot−to−Lot  
• BUL146F, Case 221D, is UL Recognized to 3500 V  
: File # E69369  
• These Devices are Pb−Free and are RoHS Compliant*  
RMS  
BUL146G  
AYWW  
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
STYLE 1  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
400  
700  
9.0  
2
3
V
CES  
V
EBO  
Collector Current − Continuous  
− Peak (Note 1)  
I
6.0  
15  
C
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
4.0  
8.0  
Adc  
V
B
BM  
BUL146FG  
AYWW  
RMS Isolation Voltage (Note 2)  
BUL146F  
4500  
3500  
1500  
(for 1 sec, R.H. < 30%, T = 25_C)  
V
ISOL1  
V
ISOL2  
V
ISOL3  
C
TO−220 FULLPACK  
CASE 221D  
STYLE 2  
UL RECOGNIZED  
1
2
3
Total Device Dissipation @ T = 25_C  
P
D
W
W/_C  
C
BUL146  
100  
40  
BUL146F  
Derate above 25°C  
BUL146  
0.8  
BUL146F  
0.32  
G
A
Y
WW  
= Pb−Free Package  
= Assembly Location  
Operating and Storage Temperature  
T , T  
−65 to 150  
_C  
J
stg  
= Year  
= Work Week  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
_C/W  
q
JC  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
BUL146  
1.25  
BUL146F  
3.125  
Thermal Resistance, Junction−to−Ambient  
R
62.5  
260  
_C/W  
_C  
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Proper strike and creepage distance must be provided.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 9  
BUL146/D  
 
1234567...11

中文翻译

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与BUL146F相关器件

型号 品牌 获取价格 描述 数据表
BUL146FG ONSEMI

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 		SWITCHMODE NPN Bipolar Power Transistor
BUL146G ONSEMI

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 		SWITCHMODE NPN Bipolar Power Transistor
BUL146L MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146N MOTOROLA

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 		8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146S MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146T MOTOROLA

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 		8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146U MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146U2 MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146UA MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146W MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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