Datasheet > BUL138_01

BUL138_01

更新时间： 2024-11-28 06:44:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
6页	266K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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BUL138_01 数据手册

BUL138

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

FULLY CHARACTERIZED AT 125^oC

APPLICATIONS

■

ELECTRONIC BALLASTS FOR

TO-220

FLUORESCENT LIGHTING

■

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The BUL138 is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and high voltage capability. It

uses a Cellular Emitter structure with planar edge

termination to enhance switching speeds.

INTERNAL SCHEMATIC DIAGRAM

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

800

400

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

June 2001

12 3 4 5 6

中文翻译

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