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BUL146AF

更新时间： 2024-11-26 13:05:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
10页 391K
描述
TRANSISTOR 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Power

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BUL146AF 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.77
外壳连接：COLLECTOR最大集电极电流 (IC)：6 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：8JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：14 MHzBase Number Matches：1

BUL146AF 数据手册

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Order this document  
by BUL146/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
The BUL146/BUL146F have an applications specific state–of–the–art die designed  
for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power  
supplies for all types of electronic equipment. These high voltage/high speed  
transistors offer the following:  
POWER TRANSISTOR  
6.0 AMPERES  
700 VOLTS  
40 and 100 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain  
— Fast Switching  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Full Characterization at 125°C  
Parametric Distributions are Tight and Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
•
BUL146F, Isolated Case 221D, is UL Recognized to 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL146  
BUL146F  
400  
Unit  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
V
700  
9.0  
CES  
EBO  
BUL146  
CASE 221A–06  
TO–220AB  
V
Collector Current — Continuous  
— Peak(1)  
I
C
6.0  
15  
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
V
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
—
—
—
4500  
3500  
1500  
ISOL  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
100  
0.8  
40  
0.32  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
BUL146F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Thermal Resistance — Junction to Case  
R
R
1.25  
62.5  
3.125  
62.5  
°C/W  
θJC  
θJA  
— Junction to Ambient  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CEO  
B
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CE  
CES EB  
CES  
(T = 125°C)  
C
Collector Cutoff Current (V  
CE  
= 500 V, V  
EB  
= 0)  
(T = 125°C)  
C
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
1234567...10

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与BUL146AF相关器件

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BUL146AJ MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146BV ONSEMI

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 		暂无描述
BUL146C MOTOROLA

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 		8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146D1 MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146DW ONSEMI

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 		6A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
BUL146F MOTOROLA

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 		POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS
BUL146F ONSEMI

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 		功率 8A 400V NPN
BUL146FG ONSEMI

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 		SWITCHMODE NPN Bipolar Power Transistor
BUL146G ONSEMI

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 		SWITCHMODE NPN Bipolar Power Transistor
BUL146L MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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