Datasheet > BUL1403ED_02

BUL1403ED_02

更新时间： 2024-11-26 03:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
6页	201K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BUL1403ED_02 数据手册

BUL1403ED

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

INTEGRATED ANTISATURATION AND

PROTECTION NETWORK

INTEGRATED ANTIPARALLEL COLLECTOR

EMITTER DIODE

■

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

ARCING TEST SELF PROTECTED

APPLICATIONS

TO-220

■

2/4 LAMPS ELECTRONIC BALLAST FOR

FLUORESCENT LIGHTING 277 V_AC

PUSH-PULL CONFIGURATION

DESCRIPTION

The BUL1403ED is a new device, designed for

fluorescent electronic ballast 277 V_ACpush-pull

applications (up to 4 lamps).

INTERNAL SCHEMATIC DIAGRAM

This device, it can be used without baker clamp

and transil protection, reducing greatly the

component count.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

1400

650

I_CM

Collector Peak Current (t_p<5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p<5 ms)

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

September 2002

12 3 4 5 6

中文翻译

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