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BUL128 PDF预览

BUL128

更新时间: 2024-09-14 06:44:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 240K
描述
Silicon NPN Power Transistor

BUL128 数据手册

 浏览型号BUL128的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUL128  
DESCRIPTION  
·Collector–Emitter Sustaining Voltage  
: VCEO(SUS) = 400V(Min.)  
·Low Collector Saturation Voltage  
: VCE(sat) = 0.7V(Max) @ IC= 0.5A  
·Very High Switching Speed  
APPLICATIONS  
·Designed for use in lighting applications and low cost switch-  
mode power supplies.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
700  
400  
V
9
V
Collector Current-Continuous  
Collector Current-peak tp<5ms  
Base Current-Continuous  
Base Current-peak tp<5ms  
4
A
ICM  
8
A
IB  
2
4
A
IBM  
A
Collector Power Dissipation  
TC=25℃  
PC  
70  
W
Junction Temperature  
150  
Ti  
Storage Temperature Range  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.78  
62.5  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
Rth j-A  
isc Websitewww.iscsemi.cn  

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