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BUL118-A PDF预览

BUL118-A

更新时间: 2024-09-14 12:59:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
7页 77K
描述
3A, 400V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

BUL118-A 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.83
最大集电极电流 (IC):3 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUL118-A 数据手册

 浏览型号BUL118-A的Datasheet PDF文件第2页浏览型号BUL118-A的Datasheet PDF文件第3页浏览型号BUL118-A的Datasheet PDF文件第4页浏览型号BUL118-A的Datasheet PDF文件第5页浏览型号BUL118-A的Datasheet PDF文件第6页浏览型号BUL118-A的Datasheet PDF文件第7页 
BUL118  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
3
2
1
DESCRIPTION  
TO-220  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Value  
700  
Unit  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
V
V
V
VCEO  
400  
VEBO  
Emitter-Base Voltage  
BVEBO  
(IC = 0, IB <1.5A, tp <10µs, Tj < 150oC)  
IC  
ICM  
IB  
Collector Current  
3
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
6
1.5  
A
IBM  
Ptot  
Tstg  
Base Peak Current (tp < 5 ms)  
3
60  
A
o
Total Dissipation at Tc = 25 C  
W
oC  
Storage Temperature  
-65 to 150  
1/7  
May 1999  

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