Datasheet > BUL1203E

BUL1203E

更新时间： 2024-11-26 06:44:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	255K
描述
Silicon NPN Power Transistor

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中文翻译

获取价格

技术参数
数据手册

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BUL1203E 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79

BUL1203E 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUL1203E

DESCRIPTION

·High Voltage

·High Speed Switching

APPLICATIONS

·Electronic ballasts for fluorescent lighting

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CBO

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage V_BE= 0

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

1200

550

Collector Current-Continuous

Collector Current-Peak

Base Current

I_CM

I_B

I_BM

Base Current-Peak

Collector Power Dissipation

@T_C=25℃

P_C

100

150

-65~150

℃

T_j

Junction Temperature

T_stg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.25

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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