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BUL118 PDF预览

BUL118

更新时间: 2024-11-25 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
7页 77K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL118 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.48
Is Samacsys:N其他特性:HIGH RELIABILITY
最大集电极电流 (IC):3 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):245
极性/信道类型:NPN最大功率耗散 (Abs):60 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUL118 数据手册

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BUL118  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
3
2
1
DESCRIPTION  
TO-220  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Value  
700  
Unit  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
V
V
V
VCEO  
400  
VEBO  
Emitter-Base Voltage  
BVEBO  
(IC = 0, IB <1.5A, tp <10µs, Tj < 150oC)  
IC  
ICM  
IB  
Collector Current  
3
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
6
1.5  
A
IBM  
Ptot  
Tstg  
Base Peak Current (tp < 5 ms)  
3
60  
A
o
Total Dissipation at Tc = 25 C  
W
oC  
Storage Temperature  
-65 to 150  
1/7  
May 1999  

BUL118 替代型号

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