Datasheet > BSP613PH6327XTSA1

BSP613PH6327XTSA1

更新时间： 2024-12-01 03:11:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	382K
描述
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP613PH6327XTSA1 数据手册

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第2页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第3页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第4页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第5页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第6页

BSP613P

SIPMOS Small-Signal-Transistor

Feature

Product Summary

-60

0.13

-2.9

Ω

• P-Channel

DS(on)

• Enhancement mode

• Avalanche rated

PG-SOT223

• dv/dt rated

• Ideal for fast switching buck converter

Drain

pin 2,4

Gate

pin1

• Qualified according to AEC Q101

Source

pin 3

•

Halogenfree according to IEC61249221

Type

BSP613P

Package

Tape and reel

Packaging

Marking

PG-SOT223

H6327: 1000pcs/r. Non Dry

BSP613P

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-2.9

-2.3

T =70°C

-11.6

Pulsed drain current

D puls

T =25°C

150

Avalanche energy, single pulse

I =2.9 A , V =-25V, R =25Ω

0.18

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I =2.9A, V =-48V, di/dt=-200A/µs, T

=150°C

jmax

Gate source voltage

Power dissipation

1.8

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

ESD Class

Class 1c

JESD22-A114-HBM

Rev.2.8

Page 1

2016-05-30

12 3 4 5 6 7...9

中文翻译

下载PDF

与BSP613PH6327XTSA1相关器件

型号	品牌	获取价格	描述	数据表
BSP613PL6327	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP615S2L	INFINEON	获取价格	OptiMOS Power-Transistor
BSP61-E6433	INFINEON	获取价格	Transistor
BSP61-T	NXP	获取价格	TRANSISTOR 0.5 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP61T/R	NXP	获取价格	TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BI
BSP61-TAPE-13	NXP	获取价格	TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP61-TAPE-7	NXP	获取价格	TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP61TRL	YAGEO	获取价格	Power Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
BSP61TRL13	NXP	获取价格	TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP62	INFINEON	获取价格	PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturatio