Datasheet > BSP613PH6327XTSA1

BSP613PH6327XTSA1

更新时间： 2025-07-20 03:11:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	382K
描述
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

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BSP613PH6327XTSA1 数据手册

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BSP613P

5 Typ. output characteristic

I = f (V )

6 Typ. drain-source on resistance

= f (I )

DS(on)

parameter: T =25°C

parameter: V ; T = 25 °C

0.5

Ω

Vgs = 5V

5.5

0.4

0.35

0.3

Vgs = 4V

Vgs = 4,5V

Vgs = 10V

Vgs = 6V

Vgs = 4.5V

4.5

0.25

0.2

3.5

Vgs = 5V

2.5

Vgs = 4V

0.15

0.1

Vgs = 6V

1.5

Vgs = 10V

Vgs=3.5V

0.05

0.5

1.5

2.5

3.5

-I

-VDS

7 Typ. transfer characteristics

8 Typ. forward transconductance

g = f(I )

I = f ( V ); |V |≥ 2 x |I | x R

DS(on)max

parameter: T = 25 °C

-V

-I

Rev.2.8

Page 5

2016-05-30

1 2 3 456 7 8 9

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