Datasheet > BSP613P_07

BSP613P_07

更新时间： 2025-07-19 09:00:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	124K
描述
SIPMOS Small-Signal-Transistor

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中文翻译

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数据手册

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BSP613P_07 数据手册

BSP613P

SIPMOS Small-Signal-Transistor

Feature

Product Summary

-60

0.13

-2.9

· P-Channel

DS(on)

· Enhancement mode

· Avalanche rated

· dv/dt rated

PG-SOT-223

· Ideal for fast switching buck converter

Drain

pin 2,4

Gate

pin1

Type

Package

Tape and reel

Source

pin 3

BSP613P

PG-SOT-223

L6327: 1000pcs/r.

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-2.9

-2.3

T =70°C

-11.6

Pulsed drain current

D puls

T =25°C

150

Avalanche energy, single pulse

I =2.9 A , V =-25V, R =25W

0.18

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I =2.9A, V =-48V, di/dt=-200A/µs, T =150°C

jmax

Gate source voltage

Power dissipation

±20

1.8

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

Rev.2.4

Page 1

2007-02-08

12 3 4 5 6 7 8

中文翻译

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