Datasheet > BSP613P_07

BSP613P_07

更新时间： 2024-11-30 09:00:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	124K
描述
SIPMOS Small-Signal-Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP613P_07 数据手册

BSP613P

SIPMOS Small-Signal-Transistor

Feature

Product Summary

-60

0.13

-2.9

· P-Channel

DS(on)

· Enhancement mode

· Avalanche rated

· dv/dt rated

PG-SOT-223

· Ideal for fast switching buck converter

Drain

pin 2,4

Gate

pin1

Type

Package

Tape and reel

Source

pin 3

BSP613P

PG-SOT-223

L6327: 1000pcs/r.

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-2.9

-2.3

T =70°C

-11.6

Pulsed drain current

D puls

T =25°C

150

Avalanche energy, single pulse

I =2.9 A , V =-25V, R =25W

0.18

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I =2.9A, V =-48V, di/dt=-200A/µs, T =150°C

jmax

Gate source voltage

Power dissipation

±20

1.8

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

Rev.2.4

Page 1

2007-02-08

12 3 4 5 6 7 8

中文翻译

下载PDF

与BSP613P_07相关器件

型号	品牌	获取价格	描述	数据表
BSP613PH6327	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP613PH6327XTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP613PL6327	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP615S2L	INFINEON	获取价格	OptiMOS Power-Transistor
BSP61-E6433	INFINEON	获取价格	Transistor
BSP61-T	NXP	获取价格	TRANSISTOR 0.5 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP61T/R	NXP	获取价格	TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BI
BSP61-TAPE-13	NXP	获取价格	TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP61-TAPE-7	NXP	获取价格	TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP61TRL	YAGEO	获取价格	Power Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,