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BSP62 PDF预览

BSP62

更新时间: 2024-12-01 11:08:59
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
10页 193K
描述
PNP Darlington transistorProduction

BSP62 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
风险等级:5.7外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BSP62 数据手册

 浏览型号BSP62的Datasheet PDF文件第2页浏览型号BSP62的Datasheet PDF文件第3页浏览型号BSP62的Datasheet PDF文件第4页浏览型号BSP62的Datasheet PDF文件第5页浏览型号BSP62的Datasheet PDF文件第6页浏览型号BSP62的Datasheet PDF文件第7页 
BSP62  
PNP Darlington transistor  
2 May 2018  
Product data sheet  
1. General description  
PNP Darlington transistor in an SOT223 plastic package.  
NPN complement: BSP52  
2. Features and benefits  
High current of -1 A  
Low voltage of -80 V  
Integrated diode and resistor  
AEC-Q101 qualified  
3. Applications  
Industrial switching applications such as:  
- Print hammer  
- Solenoid  
- Relay and lamp drivers  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VCBO  
Parameter  
Conditions  
Min  
Typ  
Max  
-90  
Unit  
V
collector-base voltage open emitter  
-
-
-
-
VCES  
collector-emitter  
voltage  
base short-circuited to emitter  
-80  
V
IC  
collector current  
-
-
-
-
-1  
-2  
-
A
A
ICM  
hFE  
peak collector current  
DC current gain  
-
VCE = -10 V; IC = -150 mA  
[1]  
1000  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

BSP62 替代型号

型号 品牌 替代类型 描述 数据表
BSP62 NXP

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