Datasheet > BSP613PH6327XTSA1

BSP613PH6327XTSA1

更新时间： 2025-07-20 03:11:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	382K
描述
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

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BSP613PH6327XTSA1 数据手册

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BSP613P

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

typ. max.

Unit

min.

Dynamic Characteristics

|V |≥2*|I |*R ,

DS(on)max

2.7

5.4

Transconductance

I =2.9A

=0, V =-25V,

715

230

6.7

875 pF

295

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

iss

f=1MHz

oss

120

rss

=-30V, V =-10V,

d(on)

I =2.9A, R =2.7Ω

Turn-off delay time

Fall time

d(off)

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

=-48V, I =2.9A

2.5

8.9

3.8 nC

14.3

=-48V, I =2.9A,

Gate charge total

=0 to -10V

=-48V, I =2.9A

-3.9

Gate plateau voltage

(plateau)

Reverse Diode

T =25°C

-2.9

Inverse diode continuous

forward current

-11.6

Inv. diode direct current, pulsed I

=0V, |I | = |I |

-0.8

37.2

59.8

-1.1 V

Inverse diode forward voltage

Reverse recovery time

V =-30V, |I | = |I |,

di /dt=100A/µs

112 nC

Reverse recovery charge

Rev.2.8

Page 3

2016-05-30

1 234 5 6 7...9

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