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BSP62TRL13 PDF预览

BSP62TRL13

更新时间: 2024-02-22 16:21:08
品牌 Logo 应用领域
国巨 - YAGEO 光电二极管晶体管
页数 文件大小 规格书
3页 91K
描述
Power Bipolar Transistor, 0.5A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

BSP62TRL13 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:90 V
配置:DARLINGTON最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
VCEsat-Max:1.3 VBase Number Matches:1

BSP62TRL13 数据手册

 浏览型号BSP62TRL13的Datasheet PDF文件第2页浏览型号BSP62TRL13的Datasheet PDF文件第3页 

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