Datasheet > BSP62-Q

BSP62-Q

更新时间： 2024-12-01 15:18:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	200K
描述
PNP Darlington transistorProduction

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BSP62-Q 数据手册

BSP62-Q

PNP Darlington transistor

7 June 2023

Product data sheet

1. General description

PNP Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package.

NPN complement: BSP52-Q

2. Features and benefits

•

High current of -1 A

•

Low voltage of -80 V

Integrated diode and resistor

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Industrial switching applications such as:

-Print hammer

-Solenoid

-Relay and lamp drivers.

4. Quick reference data

Table 1. Quick reference data

Symbol

V_CBO

Parameter

Conditions

Min

Typ

Max

-90

Unit

collector-base voltage open emitter

V_CES

collector-emitter

voltage

base short-circuited to emitter

-80

I_C

collector current

-1

-2

I_CM

h_FE

peak collector current

DC current gain

V_CE= -10 V; I_C= -150 mA; T_j= 25 °C

[1]

1000

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...10

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