是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | unknown | 风险等级: | 5.86 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 2000 | JEDEC-95代码: | TO-261AA |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP62-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP62-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP62TRL | NXP |
获取价格 |
TRANSISTOR 0.5 A, 90 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP62TRL | YAGEO |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
BSP62TRL13 | NXP |
获取价格 |
TRANSISTOR 0.5 A, 90 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP62TRL13 | YAGEO |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
BSP742R | INFINEON |
获取价格 |
Smart Power High-Side-Switch | |
BSP742-R | ETC |
获取价格 |
?400mΩ. 5-34V 0.4A. P-DSO-8 | |
BSP742R_08 | INFINEON |
获取价格 |
Smart High-Side Power Switch | |
BSP742RI | INFINEON |
获取价格 |
Smart Power High-Side-Switch |