Datasheet > BSP613PH6327XTSA1

BSP613PH6327XTSA1

更新时间： 2025-07-20 03:11:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	382K
描述
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP613PH6327XTSA1 数据手册

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第1页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第3页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第4页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第5页

浏览型号BSP613PH6327XTSA1的Datasheet PDF文件第6页

BSP613P

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ. max.

Characteristics

K/W

Thermal resistance, junction - soldering point

(Pin 4)

thJS

100

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

thJA

100

@ 6 cm cooling area

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

-60

typ. max.

Static Characteristics

Drain-source breakdown voltage

(BR)DSS

=0, I =-250µA

-2.1

-3

-4

Gate threshold voltage, V = V

GS(th)

I =-1mA

µA

Zero gate voltage drain current

DSS

=-60V, V =0, T =25°C

-0.1

-10

-1

=-60V, V =0, T =125°C

-100

-100 nA

Gate-source leakage current

GSS

=-20V, V =0

0.11

0.13

Drain-source on-state resistance

Ω

DS(on)

=-10V, I =2.9A

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev.2.8

Page 2

2016-05-30

123 4 5 6 7...9

中文翻译

下载PDF

与BSP613PH6327XTSA1相关器件

型号	品牌	获取价格	描述	数据表
BSP613PL6327	INFINEON	获取价格	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Met
BSP613PL6327HUSA1	INFINEON	获取价格	元器件封装:PG-SOT223-4;
BSP613P_07	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP615S2L	INFINEON	获取价格	OptiMOS Power-Transistor
BSP61E6327HTSA1	INFINEON	获取价格	元器件封装:PG-SOT223-4;
BSP61H6327XTSA1	INFINEON	获取价格	元器件封装:PG-SOT223-4;
BSP61T/R	NXP	获取价格	TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BI
BSP61TRL	YAGEO	获取价格	Power Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
BSP61TRL13	NXP	获取价格	TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP62	NXP	获取价格	PNP Darlington transistors