Datasheet > BLP021N10

BLP021N10

更新时间： 2024-11-10 14:53:59

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	988K
描述
BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

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BLP021N10 数据手册

BLP021N10

MOSFET

1．Description

BLP021N10, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for BMS

and high current switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

292

1.6

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

TOLL8

APPLICATIONS



BMS



High current switching applications

ORDERING INFORMATION

Ordering Codes

BLP021N10-T

Package

TOLL8

Product Code

P021N10

Packing

Reel

XXXXX：Product Code

YYWW：Year&Week

BLP021N10-T

(2) Package type

(1) Chip name

XXXXX

YYWW ZZ

SSSSS

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLP021N10：2.1mΩ/100V

(2) T：TOLL8

BLP021N10

Rev 1.1

10/2022

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...11

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