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BLP021N10 PDF预览

BLP021N10

更新时间: 2024-11-26 14:53:59
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
11页 988K
描述
BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

BLP021N10 数据手册

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BLP021N10  
MOSFET  
1Description  
BLP021N10, the N-channel Enhanced Power  
MOSFETs, is obtained by advanced double trench  
technology which reduce the conduction loss,  
improve switching performance and enhance the  
avalanche energy. This is suitable device for BMS  
and high current switching applications.  
KEY CHARACTERISTICS  
Parameter  
Value  
100  
292  
1.6  
Unit  
V
VDSS  
ID  
A
m  
RDS(on).typ  
FEATURES  
Fast Switching  
Low On-Resistance  
Low Gate Charge  
Low Reverse transfer capacitances  
High avalanche ruggedness  
RoHS product  
TOLL8  
APPLICATIONS  
BMS  
High current switching applications  
ORDERING INFORMATION  
Ordering Codes  
BLP021N10-T  
Package  
TOLL8  
Product Code  
P021N10  
Packing  
Reel  
XXXXXProduct Code  
YYWWYear&Week  
BLP021N10-T  
(2) Package type  
(1) Chip name  
XXXXX  
YYWW ZZ  
SSSSS  
ZZAssembly Code  
SSSSSLot Code  
(1) BLP021N102.1mΩ/100V  
(2) TTOLL8  
BLP021N10  
Rev 1.1  
10/2022  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  

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