Datasheet > BLP042N10G

BLP042N10G

更新时间： 2024-11-26 14:53:47

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	999K
描述
BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

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BLP042N10G 数据手册

BLP042N10G

MOSFET

1．Description

BLP042N10G, the N-channel Enhanced Power

MOSFETs, is obtained by advanced double trench Ⅱ

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche

energy. This is suitable device for Synchronous

rectification and high speed switching applications.

KEY CHARACTERISTICS

Parameter

Value

100

120

3.7

Unit

TO-220

V_DSS

I_D

mΩ

R_{DS(on)@10V.typ}

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS



Synchronous rectification



High speed switching applications

ORDERING INFORMATION

Ordering Codes

BLP042N10G-P

BLP042N10G-B

Product Code

Package

Device Marking

P042N10G

Packing

Tube

BLP042N10G

TO-220

TO-263

P042N10G

Reel

XXXX：Device Marking

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

BLP042N10G-P

XXXX

YYWW ZZ

SSSSS

(2) Package type

(1) Chip name

(1)BLP042N10G 4.2mΩ/100V

(2) P：TO-220 B：TO-263

BLP042N10G

Rev1.0

4/2023

www.belling.com.cn

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