Datasheet > BLP05H6350XR

BLP05H6350XR

更新时间： 2024-11-05 21:21:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	1209K
描述
POWER, FET

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技术参数
数据手册

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BLP05H6350XR 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

BLP05H6350XR 数据手册

BLP05H6350XR

Power LDMOS transistor

Rev. 3 — 12 October 2015

Product data sheet

1. Product profile

1.1 General description

A 350 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

108

(W)

350

(dB)

(%)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...14

中文翻译

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BLP05H6350XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H6350XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
BLP05H635XR	NXP	获取价格	RF POWER, FET
BLP05H635XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H635XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232
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BLP05H6700XRY	ETC	获取价格	RF MOSFET LDMOS 50V SOT1138-2
BLP05H675XR	NXP	获取价格	RF POWER, FET
BLP05H675XRGY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12242
BLP05H675XRY	ETC	获取价格	RF FET LDMOS 135V 27DB SOT12232