Datasheet > BLP065N08GL

BLP065N08GL

更新时间： 2024-11-26 14:54:31

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
11页	1359K
描述
BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

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BLP065N08GL 数据手册

BLP065N08GL

MOSFET

1．Description

BLP065N08GL, the N-channel Enhanced

Power MOSFETs, is obtained by advanced double

trench technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. This is suitable device for

Synchronous rectification and high speed switching

applications.

KEY CHARACTERISTICS

Parameter

Value

Unit

V_DSS

I_D

mΩ

R_DS(on).typ

5.2

FEATURES



Fast Switching

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

APPLICATIONS

PDFN 5×6



Synchronous rectification



High speed switching applications

ORDERING INFORMATION

Ordering Codes

BLP065N08GL-Q

Package

PDFN 5×6

Product Code

P065N08GL

Packing

Reel

XXXX：Product Code

BLP065N08GL-Q

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLP065N08GL：6.5mΩ/85V

(2) Q：PDFN 5×6

BLP065N08GL

www.belling.com.cn

Rev1.1

9/2022

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...11

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