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BLP065N08GL PDF预览

BLP065N08GL

更新时间: 2024-11-06 14:54:31
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
11页 1359K
描述
BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

BLP065N08GL 数据手册

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BLP065N08GL  
MOSFET  
1Description  
BLP065N08GL, the N-channel Enhanced  
Power MOSFETs, is obtained by advanced double  
trench technology which reduce the conduction loss,  
improve switching performance and enhance the  
avalanche energy. This is suitable device for  
Synchronous rectification and high speed switching  
applications.  
KEY CHARACTERISTICS  
Parameter  
Value  
85  
Unit  
V
VDSS  
ID  
80  
A
m  
RDS(on).typ  
5.2  
FEATURES  
Fast Switching  
Low On-Resistance  
Low Gate Charge  
Low Reverse transfer capacitances  
High avalanche ruggedness  
RoHS product  
APPLICATIONS  
PDFN 5×6  
Synchronous rectification  
High speed switching applications  
ORDERING INFORMATION  
Ordering Codes  
BLP065N08GL-Q  
Package  
PDFN 5×6  
Product Code  
P065N08GL  
Packing  
Reel  
XXXXProduct Code  
BLP065N08GL-Q  
(2) Package type  
(1) Chip name  
XXXX  
YYWW ZZ  
SSSSS  
YYWWYear&Week  
ZZAssembly Code  
SSSSSLot Code  
(1) BLP065N08GL6.5mΩ/85V  
(2) QPDFN 5×6  
BLP065N08GL  
www.belling.com.cn  
Rev1.1  
9/2022  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  

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