Datasheet > BLP10H610Z

BLP10H610Z

更新时间： 2022-09-29 11:53:38

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描述
RF FET LDMOS 104V 22DB 12VDFN

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BLP10H610Z 数据手册

BLP10H610

Broadband LDMOS driver transistor

Rev. 4 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at

frequencies from HF to 1400 MHz.

Table 1.

Application performance

Test signal

V_DS

(V)

P_L

(W)

>14

>13

G_p

_D

(%)

>62

>42

(MHz)

(dB)

26.7

88 to 108

400 to 450

950 to 1225

>25.5

>16

Pulsed RF ^[1]

860

1190 to 1410

860

>14

>21

DVB-T

[1] t_p= 100 s;  = 10 %.

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 1400 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

12 3 4 5 6 7...11

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