品牌 | Logo | 应用领域 |
上海贝岭 - BELLING | / | |
页数 | 文件大小 | 规格书 |
12页 | 1003K | |
描述 | ||
BLP075N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BLP075N10GL | BELLING |
获取价格 |
BLP075N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t | |
BLP08N10G | BELLING |
获取价格 |
BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | |
BLP-1.9 | MINI |
获取价格 |
Low Pass Filter, 2.5MHz, CASE FF55 | |
BLP-1.9+ | MINI |
获取价格 |
Low Pass Filter, 2.5MHz, ROHS COMPLIANT, CASE FF55 | |
BLP-10.7 | MINI |
获取价格 |
Low Pass Filter, 14MHz | |
BLP-10.7+ | MINI |
获取价格 |
Low Pass Filter, 14MHz, ROHS COMPLIANT, CASE FF55 | |
BLP-10.7-75 | MINI |
获取价格 |
Low Pass Filter, 14MHz, CASE FF55 | |
BLP-10.7-75+ | MINI |
获取价格 |
Low Pass Filter, 14MHz, ROHS COMPLIANT, CASE FF55 | |
BLP-100 | MINI |
获取价格 |
Low Pass Filter, 108MHz, CASE FF55 | |
BLP-100+ | MINI |
获取价格 |
Low Pass Filter, 108MHz, ROHS COMPLIANT, CASE FF55 |