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BLP08N10G PDF预览

BLP08N10G

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
12页 975K
描述
BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

BLP08N10G 数据手册

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BLP08N10G  
MOSFET  
1Description  
BLP08N10G, the N-channel Enhanced Power  
MOSFETs, is obtained by advanced double trench  
technology which reduce the conduction loss, improve  
switching performance and enhance the avalanche  
energy. This is suitable device for Synchronous  
rectification and high speed switching applications.  
KEY CHARACTERISTICS  
Parameter  
Value  
100  
60  
Unit  
V
VDSS  
ID  
TO-220  
A
m  
RDS(on)@10V.typ  
7.5  
FEATURES  
Fast Switching  
Low On-Resistance  
Low Gate Charge  
Low Reverse transfer capacitances  
High avalanche ruggedness  
RoHS product  
APPLICATIONS  
Synchronous rectification  
High speed switching applications  
ORDERING INFORMATION  
Ordering Codes  
BLP08N10G-P  
BLP08N10G-B  
Package  
Product Code  
P08N10G  
Packing  
Tube  
TO-220  
TO-263  
P08N10G  
Reel  
XXXXProduct Code  
BLP08N10G-P  
XXXX  
YYWW ZZ  
SSSSS  
(2) Package type  
(1) Chip name  
YYWWYear&Week  
ZZAssembly Code  
SSSSSLot Code  
(1)BLP08N10G 8mΩ/100V  
(2) PTO-220  
BTO-263  
BLP08N10G  
www.belling.com.cn  
Rev1.0  
6/2022  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  

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