BELLING (上海贝岭) 更新时间:2024-10-18 08:03:35
上海贝岭股份有限公司前身是上海贝岭微电子制造有限公司,1988年由上海市仪表局、上海贝尔公司合资设立,是国内集成电路行业的首家中外合资企业,也是国家改革开放初期成功吸引外资和引进国外先进技术的标志性企业。1998年9月公司改制上市,是国内集成电路行业首家上市公司。1999年,华虹集团成为公司控股股东。2009年,中国电子信息产业集团有限公司(CEC)成为公司控股股东。2015年7月,华大半导体成为上海贝岭控股股东,公司实际控制人仍为CEC。 上海贝岭地处漕河泾新兴技术开发区,1999年起成为国家级企业技术中心。公司专注于集成电路芯片设计和产品应用开发,是国内集成电路产品主要供应商之一。公司集成电路产品业务布局在功率链(电源管理、功率器件、电机驱动业务)和信号链(数据转换器、电力专用芯片、物联网前端、非挥发存储器、标准信号产品业务),主要目标市场为汽车电子、工控、光伏、储能、能效监测、电力设备、光通讯、家电、短距离交通工具、高端及便携式医疗设备,以及手机摄像头模组等其它消费类应用市场。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
BL7N70A | BELLING | 获取价格 | ![]() |
BL7N70A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology | ||
BL3714 | BELLING | 获取价格 | ![]() |
放大器运算放大器 | BL371X是上海贝岭推出的系列轨到轨、高带宽、低噪声运算放大器,工作电压支持2.1V-5 | |
BL3712 | BELLING | 获取价格 | ![]() |
放大器运算放大器 | BL371X是上海贝岭推出的系列轨到轨、高带宽、低噪声运算放大器,工作电压支持2.1V-5 | |
BL3711 | BELLING | 获取价格 | ![]() |
放大器运算放大器 | BL371X是上海贝岭推出的系列轨到轨、高带宽、低噪声运算放大器,工作电压支持2.1V-5 | |
BLP02N06L-Q | BELLING | 获取价格 | ![]() |
BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP039N08-D | BELLING | 获取价格 | ![]() |
BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP038N15-T | BELLING | 获取价格 | ![]() |
BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP038N15 | BELLING | 获取价格 | ![]() |
BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP032N06-D | BELLING | 获取价格 | ![]() |
BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP032N06-Q | BELLING | 获取价格 | ![]() |
BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP032N06 | BELLING | 获取价格 | ![]() |
BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP02N11-T | BELLING | 获取价格 | ![]() |
BLP02N11, the N-channel Enhanced Power MOSFET | ||
BLP02N08-T | BELLING | 获取价格 | ![]() |
BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech | ||
BLP065N10GL-P.B | BELLING | 获取价格 | ![]() |
BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t | ||
BLP039N08-Q | BELLING | 获取价格 | ![]() |
BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP03N08-T.BA | BELLING | 获取价格 | ![]() |
BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech | ||
BLM30N06L | BELLING | 获取价格 | ![]() |
BLM30N06L uses advanced trench technology and design to provide excellent RDS(ON) with low | ||
BLQG5036 | BELLING | 获取价格 | ![]() |
双极性晶体管 | BLQG5036 is obtained by advanced ignition IGBTs technology which reduce the conduction los | |
BLP12N10G-E | BELLING | 获取价格 | ![]() |
BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP08N10G-Q.D | BELLING | 获取价格 | ![]() |
BLP08N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP03N10-T.BA | BELLING | 获取价格 | ![]() |
BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech | ||
BLP036N08-D | BELLING | 获取价格 | ![]() |
BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP036N10-P.B | BELLING | 获取价格 | ![]() |
BLP036N10, the N-channel Enhanced Power MOSFE | ||
BLP038N10GL-Q | BELLING | 获取价格 | ![]() |
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t | ||
BLP038N10GL-P.B | BELLING | 获取价格 | ![]() |
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t | ||
BLP023N10-BA | BELLING | 获取价格 | ![]() |
BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP023N10-T | BELLING | 获取价格 | ![]() |
BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tec | ||
BLP075N10GL-D.Q | BELLING | 获取价格 | ![]() |
BLP075N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench t | ||
BLP07N08-P.B | BELLING | 获取价格 | ![]() |
BLP07N08, the N-channel Enhanced Power MOSFET | ||
BLP02N06-T | BELLING | 获取价格 | ![]() |
BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench tech |
BELLING (上海贝岭) 经销商与分销商
公司名称 | 类型 | 国家 | 官网 | 地址 |
深圳市思之宏电子科技有限公司 | 经销商 | 中国 | http://www.hongdian.com/ | 深圳市龙岗区平湖街道华宝路100号宏电大厦 A 座 |
深圳彤辉科技有限公司 | 经销商 | 中国 | http://www.tonghuitech.com/ | 深圳市龙华区龙华街道三联社区创业路汇海广场B座1501-1502 |
深圳淇诺科技有限公司 | 经销商 | 中国 | http://www.eqinuo.com.cn/ | 广东省深圳市南山区科技中一路华强高新发展大楼6楼 |
帕太国际贸易(上海)有限公司 | 经销商 | 中国 | http://www.powertek.com.cn/ | 中国(上海)浦东新区世纪大道1196号世纪汇办公楼二座21层01-02室 |
深圳市海富利电子有限公司 | 经销商 | 中国 | http://www.haifuli.com.cn/ | 深圳市南山区创业路怡海广场东座1901-1908 |
深圳市沛城电子科技股份有限公司 | 经销商 | 中国 | http://www.paceic.com/ | 广东省深圳市南山区科技园北区松坪山路3号奥特迅电力大厦三层 |
深圳中电港技术股份有限公司 | 经销商 | 中国 | https://www.cecport.com/ | 深圳市南山区桃源街道留仙大道3333号塘朗城广场(西区)A座23层 |
BELLING (上海贝岭) 热门型号