Datasheet > BLM10N20

BLM10N20

更新时间： 2024-04-09 19:01:48

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
8页	957K
描述
BLM10N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM10N20 数据手册

BLM10N20

Power MOSFET

1．Description

BLM10N20 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. It can be used in a wide variety of

applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

R_DS(ON).Typ

FEATURES

Value

200

100

Unit

mΩ



High power and current handing capability

Lead free product is acquired

100% avalanche tested

100% ΔVds tested

RoHS product

TO-247 Top View

APPLICATIONS



Load switch



Power management

ORDERING INFORMATION

Device Marking Ordering Codes

Package Product Code

TO-247 BLM10N20

Packing

Tube

M10N20

BLM10N20-F

XXXX：Device Marking

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BLM10N20:200V 10.8mΩ

(2)F:TO-247

BLM10N20

www.belling.com.cn

Rev 1.0

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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