Datasheet > BLM10N20

BLM10N20

更新时间： 2024-04-09 19:01:48

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
8页	957K
描述
BLM10N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM10N20 数据手册

BLM10N20

Power MOSFET

Figure 5 BV vs Junction Temperature

Figure 6 Vth vs Junction Temperature

Figure 7 Gate-Charge Characteristics

Figure 8 Capacitance Characteristics

BLM10N20

www.belling.com.cn

Rev 1.0

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

5/ 8

12/2023

1 2 3 456 7 8

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