Datasheet > BLM10P03

BLM10P03

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	2458K
描述
The BLM10P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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BLM10P03 数据手册

Green Product

BLM10P03

30V P-Channel Power MOSFET

DESCRIPTION

KEY CHARACTERISTICS

The BLM10P03 uses advanced trench technology to provide ● V_DS= -30V,I_D= -24A (PDFN3.3*3.3)

excellent R_DS(ON), low gate charge. It can be used in a wide

variety of applications.

I_D= -30A(PDFN5*6)

I_D= -15A (SOP8)

I_D= -40A (TO-252)

Application

●Power switching application

●Hard switched and High frequency circuits

●Battery Protection

R_DS(ON)< 10mΩ @ V_GS=-10V

R_DS(ON)< 15mΩ @ V_GS=-4.5V

● High density cell design for lower Rdson

● Excellent package for good heat dissipation

Pin1

TO-252-2L

SOP8

Package Top View

Schematic diagram

PDFN 5*6

PDFN 3.3*3.3

Package Marking And Ordering Information

Device Marking

Ordering Codes

BLM10P03-D

BLM10P03-R

BLM10P03-E

BLM10P03-Q

Package

TO-252-2L

PDFN3.3*3.3

SOP8

Product Code

Packing

Tape Reel

M10P03

BLM10P03

M10P03

PDFN5*6

Absolute Maximum Ratings (T_A=25℃

Parameter

unless otherwise noted)

Symbol

Limit

Unit

Drain-Source Voltage

-30

±20

-24

VDS

VGS

Gate-Source Voltage

I_D（PDFN3.3*3.3）

I_D（PDFN5*6）

I_D（SOP8）

-30

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

-15

-40

I_D（TO-252）

-96

I_DM（PDFN3.3*3.3）

I_DM（PDFN5*6）

I_DM（SOP8）

-120

-60

-160

I_DM（TO-252）

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中文翻译

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