Datasheet > BLQM07N06

BLQM07N06

更新时间： 2024-04-09 19:02:02

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
6页	745K
描述
BLQM07N06，lv，低压、mos

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BLQM07N06 数据手册

Green Product

BLQM07N06

60V N-Channel Power MOSFET

DESCRIPTION

KEY CHARACTERISTICS

The BLQM07N06 uses advanced trench technology to provide ● V_DS= 60V,I_D=95A

R_DS(ON)< 7.0mΩ @ V_GS=10V

Special process technology for high ESD capability

excellent R_DS(ON), low gate charge. It can be used in a wide

variety of applications.

●

High density cell design for lower Rdson

175°C operating temperature

Good stability and uniformity with high EAS

AEC Q101 qualified

Application

●Valves control

●Solenoids control

●Lighting

MSL1 up to 260°C peak reflow

100% UIS TESTED！

100% DVDS TESTED！

TO-252-2L Top View

Schematic diagram

Package Marking And Ordering Information

Device Marking

Ordering Codes

Package

Product Code

Packing

QM07N06

BLQM07N06-D

TO-252-2L

BLQM07N06

Tape Reel

Absolute Maximum Ratings (TA=25℃

unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

VDS

Limit

Unit

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

I_D

Drain Current-Pulsed ^{(Note 1)}

380

I_DM

330

℃

Maximum Power Dissipation(Tc=25℃)

Single pulse avalanche energy^{(Note 2)}

Operating Junction and Storage Temperature Range

P_D

260

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

Thermal Resistance,Junction-to-Ambient

R_θJC

R_θJA

0.45

62.5

℃/W

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