Datasheet > BLQM08N06

BLQM08N06

更新时间： 2024-04-09 18:59:47

品牌	Logo	应用领域
上海贝岭 - BELLING		栅
页数	文件大小	规格书
6页	605K
描述
BLQM08N06是一款60V 80A trench NMOS，采用先进的沟槽技术，具有低Rdson，高Eas能力，低栅电荷。它可以用于各种各样的应用。

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BLQM08N06 数据手册

Green Product

BLQM08N06

60V N-Channel Power MOSFET

DESCRIPTION

KEY CHARACTERISTICS

The BLQM08N06 uses advanced trench technology to provide ● V_DS= 60V,I_D= 80A

excellent R_DS(ON), low gate charge. It can be used in a wide

variety of applications.

R_DS(ON)< 8.0mΩ @ V_GS=10V

● Special process technology for high ESD capability

● High density cell design for lower Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

100% UIS TESTED！

Application

●Power switching application

●Hard switched and High frequency circuits

●Uninterruptible power supply

100% DVDS TESTED！

Schematic diagram

TO-252-2L Top View

Package Marking And Ordering Information

Device Marking

Ordering Codes

Package

Product Code

Packing

QM08N06

BLQM08N06-D

TO-252-2L

BLQM08N06

Tape Reel

Absolute Maximum Ratings (TA=25℃

unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

VDS

Limit

Unit

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

I_D

Drain Current-Pulsed ^{(Note 1)}

320

I_DM

107

℃

Maximum Power Dissipation(Tc=25℃)

Single pulse avalanche energy^{(Note 2)}

Operating Junction and Storage Temperature Range

P_D

280

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

1.4

℃/W

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