Datasheet > BLC16N120

BLC16N120

更新时间： 2024-11-22 17:01:59

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
14页	1183K
描述
BLC16N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semiconductor mat

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BLC16N120 数据手册

BLC16N120

Silicon Carbide Power MOSFET

1．Description

BLC16N120 is an N-channel enhancement type planar

MOSFET, with the revolutionary semiconductor material -

silicon carbide, which has the advantages of low on-

resistance, low capacitance and gate charge, and superior

switching performance. The device can provide higher

efficiency, faster operation frequency and compact system

size for power-electronic system application compared to

Silicon.

TO-247-4L

FEATURES

⚫

Revolutionary semiconductor material - Silicon Carbide

High blocking voltage with low on-resistance

Fast intrinsic diode with low reverse recovery

Low switching losses

100% Avalanche Tested

RoHS product

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

1200

120

Unit

R_DS(ON).Typ

APPLICATIONS

mΩ

⚫

Switching mode power supply

Solar Inverters

DC-DC Converter

ORDERING INFORMATION

Ordering Codes

Product Code

Package

TO-247-4L

Packing

Tube

BLC16N120-Z

C16N120

BLC16N120-Z

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLC16N120:1200V 16mΩ

(2) Z：TO-247-4L

BLC16N120

Rev 1.0

10/2023

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