Datasheet > BLC2425M8LS300PZ

BLC2425M8LS300PZ

更新时间： 2024-11-18 22:07:43

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描述
RF FET LDMOS 65V 17DB SOT12501

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BLC2425M8LS300PZ 数据手册

BLC2425M8LS300P

Power LDMOS transistor

Rev. 3 — 17 June 2016

Poduct data sheet

1. Product profile

1.1 General description

300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at

frequencies from 2400 MHz to 2500 MHz.

The BLC2425M8LS300P is designed for high-power CW applications and is assembled in

a high performance plastic package.

Table 1.

Typical performance

RF performance at V_DS= 32 V; I_Dq= 20 mA; T_case= 25 C in a class-AB application circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

2450

(dB)

17.0

17.5

(%)

58.0

61.0

CW pulsed ^[1]

300

[1] t_p= 100 s;  = 10 %

1.2 Features and benefits

 High efficiency

 Easy power control

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (2400 MHz to 2500 MHz)

 Internally matched

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency

range such as ISM applications and heating

12 3 4 5 6 7...12

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