Datasheet > BLG30T65FDL

BLG30T65FDL

更新时间： 2024-04-09 19:00:48

品牌	Logo	应用领域
上海贝岭 - BELLING		双极性晶体管功率因数校正
页数	文件大小	规格书
19页	1419K
描述
BLG30T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for UPS, PFC, Photovoltaic Inverter and motor driver applications.

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BLG30T65FDL 数据手册

BLG30T65FDL

IGBT

1．Description

BLG30T65FDL is obtained by advanced

Trench Field Stop (T-FS) technology which is

characteristic with low V_CE(sat), optimized

switching performance and low gate charge Qg.

The IGBT is suitable device for UPS, PFC,

Photovoltaic Inverter and motor driver

applications.

KEY CHARACTERISTICS

Parameter

V_CES

I_C

Value

650

Unit

V_CE(sat).typ

FEATURES

1.65

⚫

Fast Switching

Low V_CE(sat)

Positive temperature coefficient

Fast recovery anti-parallel diode

RoHS product

TO-263 TO-220F TO-247

TO-3PF

APPLICATIONS

⚫

UPS

PFC

Photovoltaic Inverter

Motor driver

ORDERING INFORMATION

Device Marking

Ordering Codes

Package

TO-220F

TO-247

TO-263

TO-3PF

Product Code

BLG30T65FDL

Packing

BLG30T65FDL-A

BLG30T65FDL-F

BLG30T65FDL-B

BLG30T65FDL-K

Tube

Reel

Tube

30T65FDL

BLG30T65FDL-A/F/B/W

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year & Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLG30T65FDL: 650V 30A

(2) A:TO-220F F:TO-247

B:TO-263 K:TO-3PF

BLG30T65FDL

Rev1.0

11/2023

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