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BLG40T65FDK PDF预览

BLG40T65FDK

更新时间: 2024-11-10 14:54:39
品牌 Logo 应用领域
上海贝岭 - BELLING 双极性晶体管
页数 文件大小 规格书
14页 964K
描述
BLG40T65FDK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for welding, UPS, and high switching frequency applications.

BLG40T65FDK 数据手册

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BLG40T65FDK  
IGBT  
1Description  
BLG40T65FDK is obtained by advanced  
Trench Field Stop (T-FS) technology which is  
characteristic with low VCE(sat) , optimized switching  
performance and low gate charge Qg. The IGBT is  
suitable device for welding, UPS, and high  
switching frequency applications.  
KEY CHARACTERISTICS  
Parameter  
VCES  
IC  
Value  
650  
40  
Unit  
V
A
VCE(sat).typ  
FEATURES  
1.55  
V
Fast Switching  
Low VCE(sat)  
Positive temperature coefficient  
Fast recovery anti-parallel diode  
RoHS product  
APPLICATIONS  
TO-3PN  
TO-247  
Welding converters  
UPS  
Boost Chopper  
Air condition  
ORDERING INFORMATION  
Device Marking  
Ordering Codes  
Package  
Product Code Packing  
BLG40T65FDK-W  
BLG40T65FDK-F  
TO-3PN  
TO-247  
G40T65FDK  
G40T65FDK  
Tube  
Tube  
40T65FDK  
BLG40T65FDK-W/F  
XXXXProduct Code  
(2) Package type  
(1) Chip name  
XXXX  
YYWW ZZ  
SSSSS  
YYWWYear & Week  
ZZAssembly Code  
SSSSSLot Code  
(1) BLG40T65FDK: 650V 40A  
(2) W:TO-3PN  
F:TO-247  
BLG40T65FDK  
Rev3.0  
02/2023  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  
1

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